3D IC devices, technologies, and manufacturing

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This book discusses the advantages of 3D devices and their applications in dynamic random access memory (DRAM), 3D-NAND flash, and advanced-technology-node CMOS ICs. Topics include the development of DRAM cell transistors and storage node capacitors; the manufacturing process of advanced buried-word-line DRAM; 3D FinFET CMOS IC devices; scaling trends of CMOS logic; devices that may be used in the "post-CMOS" era; and 3D technologies, such as the 3D-wafer process integration of silicon-on-ILD a…

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Title Statements

Full title :3D IC devices, technologies, and manufacturing / Hong Xiao.

Summary

Edition Statements

Publication Date:2016

Publication Statements

Publisher(s):SPIE Press
Place of Publication:Bellingham, Washington, USA
Language:eng
Publication Date:2016

The Physical Object

Description:1 online resource (xi, 189 pages) : : colour illustrations

Edition Identifiers

ISBN:9781510601475, 1510601473
oclc:ocn945586106
LC Classification:TK7874.893
Dewey Decimal:621.3815

Preface -- 1. Manufacturing processes of 3D IC devices: 1.1. Introduction; 1.2. 3D devices in the DRAM and BWL DRAM process; 1.3. Brief summary of DRAM; 1.4. Review questions -- 2. 3D-NAND flash and its manufacturing process: 2.1. Introduction; 2.2. 3D-NAND flash memory manufacturing processes; 2.3. 3D-NAND summary and discussion; 2.4. Review questions -- 3. High-k, metal-gate FinFET CMOS manufacturing process: 3.1. Introduction; 3.2. FinFET basics; 3.3. FinFET process; 3.4. Advanced FinFET CMOS process; 3.5. Advanced FinFET SRAM; 3.6. FinFET CMOS scaling; 3.7. Review questions -- 4. Summary and future trends of the 3D IC process: 4.1. Scaling MOSFET technology after 14 nm; 4.2. Scaling and development of memory devices; 4.3. 3D packaging; 4.4. Other 3D devices and 3D IC processing techniques; 4.5. The end of Moore's Law? -- References -- Index.