Advanced high voltage power device concepts

by Baliga, B. Jayant

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Title Statements

Full title :Advanced high voltage power device concepts / B. Jayant Baliga.

Edition Statements

Publication Date:2011

Publication Statements

Publisher(s):Springer
Place of Publication:New York
Language:eng
Publication Date:2011

The Physical Object

Description:xvi, 568 pages : : illustrations ; : 24 cm

Edition Identifiers

ISBN:9781461402688, 1461402689, 9781461402695, 1461402697
oclc:ocn762058774
LC Classification:TK7881.15
Dewey Decimal:621.317

Machine generated contents note: 1. Introduction -- 1.1. Typical Power Switching Waveforms -- 1.2. Typical High Voltage Power Device Structures -- 1.3. Revised Breakdown Models for Silicon -- 1.4. Typical High Voltage Applications -- 1.4.1. Variable-Frequency Motor Drive -- 1.4.2. High Voltage Direct Current (HVDC) Power Transmission and Distribution -- 1.5. Conclusions -- References -- 2. Silicon Thyristors -- 2.1. Power Thyristor Structure and Operation -- 2.2.5,000-V Silicon Thyristor -- 2.2.1. Blocking Characteristics -- 2.2.2. On-State Characteristics -- 2.2.3. Turn-On -- 2.2.4. Reverse Recovery -- 2.2.5. Summary -- 2.3.10,000-V Silicon Thyristor -- 2.3.1. Blocking Characteristics -- 2.3.2. On-State Characteristics -- 2.3.3. Turn-On -- 2.3.4. Reverse Recovery -- 2.3.5. Summary -- 2.4. Conclusions -- References -- 3. Silicon Carbide Thyristors -- 3.1. SiC Thyristor Structure -- 3.2.20-kV Silicon Baseline Thyristor -- 3.2.1. Blocking Characteristics -- 3.2.2. On-State Characteristics.

Contents note continued: 3.3.20-kV Silicon Carbide Thyristor -- 3.3.1. Blocking Characteristics -- 3.3.2. On-State Characteristics -- 3.4. Conclusions -- References -- 4. Silicon GTO -- 4.1. Basi…

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