Applied RHEED: reflection high-energy electron diffraction during crystal growth

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The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.

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Title Statements

Full title :Applied RHEED : reflection high-energy electron diffraction during crystal growth / Wolfgang Braun.

Summary

Edition Statements

Publication Date:©1999.

Publication Statements

Publisher(s):Springer
Place of Publication:Berlin
Language:eng
Publication Date:©1999.

The Physical Object

Description:1 online resource (ix, 220 pages) : : illustrations (some color) : digital, HTML and PDF files

Edition Identifiers

ISBN:9783540494850, 3540494855
DOI:10.1007/BFb0109548
oclc:ocn216936656
LC Classification:QC1
Dewey Decimal:537.6/22

MBE-grown semiconductor interfaces -- Reflection high-energy electron diffraction (RHEED) -- RHEED oscillations -- Semikinematical simulations of RHEED patterns -- Kikuchi lines -- RHEED with rotating substrates -- Reconstruction-induced phase shifts of RHEED oscillations -- Energy loss spectroscopy during growth -- Phase shifts: Models -- Applications of reconstruction-induced phase shifts -- Closing remarks.

Subjects

Cristaux -- Croissance Crystal growth Electronic books Électrons de haute énergie -- Diffracti… Épitaxie par jets moléculaires Molecular beam epitaxy Reflection high energy electron diffrac…