Compound Semiconductors 2002

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"A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial growth, quantum confined emitters and detectors, quantum wires and dots, ultrafast …

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Title Statements

Full title :Compound Semiconductors 2002 / Marc Ilegems, Gunter Weimann, Joachim Wagner.

Summary

Edition Statements

Publication Date:2003.

Publication Statements

Publisher(s):CRC Press
Place of Publication:Boca Raton, FL
Language:eng
Publication Date:2003.

The Physical Object

Description:1 online resource

Edition Identifiers

ISBN:1482269104, 9781482269109
DOI:10.1201/9781482269109
oclc:on1051328609
LC Classification:QC611.8.C64
Dewey Decimal:621.38152

A surface reconstruction functioning as a micro mask during in-situ layer-by-layeretching of GaAs(111)B using AsBr 3Comparative study ofp-type dopants, Mg and Be in GaN grown by RF-MBE; Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence; Section 2: Processing and Characterization; Contribution of interface states and bulk traps to GaAs MIS admittance; Electrical isolation of p-type InP and InGaAs layers by iron implantation: Effects of substrate temperature

Cover; Half Title; Series Page; Title Page; Copyright Page; Contents; International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award; ISCS Quantum Devices Award; ISCS Young Scientist Award; Preface; Symposium Committees; Section 1: Growth; GaAs on silicon using an oxide buffer layer; Ultra shallow GaAs sidewall tunnel junctions implemented with low-temperature area selective regrowth; Growth and properties ofpolycrystalline GaN on ZnO/Si substrates by ECR-MBE; Single crystalline InN films grown on Si (111) substrates; Growth and evaluation of CdTe/Si (111) by hot wall epitaxy

Exciton formation inhibition in GalnAsllnP Fe doped quantum wellsCompositional dependence o…