Design and modeling for 3D ICs and interposers
3D Integration is being touted as the next semiconductor revolution. This book provides a comprehensive coverage on the design and modeling aspects of 3D integration, in particularly, focus on its electrical behavior. Looking from the perspective the silicon via (TSV) and glass via (TGV) technology, the book introduces 3D ICs and Interposers as a technology, and presents its application in numerical modeling, signal integrity, power integrity and thermal integrity. The authors underscored the p…
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- Full title :Design and modeling for 3D ICs and interposers / by Madhavan Swaminathan, Ki Jin Han.
Summary
3D Integration is being touted as the next semiconductor revolution. This book provides a comprehensive coverage on the design and modeling aspects of 3D integration, in particularly, focus on its electrical behavior. Looking from the perspective the silicon via (TSV) and glass via (TGV) technology, the book introduces 3D ICs and Interposers as a technology, and presents its application in numerical modeling, signal integrity, power integrity and thermal integrity. The authors underscored the potential of this technology in design exchange formats and power distribution.
Read More ↓Edition Statements
- Publication Date:2014.
Publication Statements
- Publisher(s):World Scientific
- Place of Publication:Hackensack, NJ
- Language:eng
- Publication Date:2014.
Notes
Includes index.
The Physical Object
- Description:1 online resource (200 pages)
Edition Identifiers
- ISBN:9789814508605, 9814508608
- oclc:ocn868319143
- LC Classification:TK7874.893
- Dewey Decimal:621.4
Table of Contents
Ch. 1. System integration and modeling concepts. 1.1. Moore's law. 1.2. IC integration vs system integration -- what is the difference? 1.3. History of integration -- an overview. 1.4. Primary drivers for 3D integration. 1.5. Role of the interposer in 3D integration. 1.6. Modeling and simulation. 1.7. Summary -- ch. 2. Modeling of cylindrical interconnections. 2.1. Introduction. 2.2. Specialized basis functions. 2.3. Electric field integral equation (EFIE) with cylindrical CMBF for resistance and inductance extraction. 2.4. Scalar potential integral equation (SPIE) with cylindrical AMBF for conductance and capacitance extraction. 2.5. Broadband equivalent RLC network. 2.6. Inclusion of planar structures. 2.7. Examples with bonding wires. 2.8. Examples with vias. 2.9. Example of package on package. 2.10. Summary -- ch. 3. Electrical modeling of through silicon vias. 3.1. Benefits of through silicon vias. 3.2. Challenges in modeling through silicon vias. 3.3. Propagating modes in through silicon vias -- an electromagnetic perspective. 3.4. Physics based modeling of through silicon vias. 3.5. Rigorous electromagnetic modeling. 3.6. Modeling of conical through silicon via. 3.7. MOS ca…
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