GaN transistors for efficient power conversion

Gallium nitride (GaN) is an emerging technology that promises to displace siliconMOSFETs in the next generation of power transistors. As silicon approaches itsperformance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students andpracticing power conversion engineers ahead of the learning curve in GaN technologyadvancements. Acknowledging that GaN transistors are not one-to-one replacements forthe current MOSFET technology, this book serves as a practical guide for understandingbasic GaN transistor construction, characteristics, and applications. Included arediscussions on the fundamental physics of these power semiconductors, layout and othercircuit design considerations, as well as specific application examples demonstratingdesign techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increaseefficiency in existing applications such as DC'DC conversion, while opening possibilitiesfor new applications including wireless power transfer and envelope tracking. This bookis an essential learning tool and reference guide to enable power conversion engineers todesign energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device'circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors ' see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.

GaN Transistors for Efficient Power Conversion; Contents; Foreword; Acknowledgments; 1 GaN Technology Overview; 1.1 Silicon Power MOSFETs 1976-2010; 1.2 The GaN Journey Begins; 1.3 Why Gallium Nitride?; 1.3.1 Band Gap (Eg); 1.3.2 Critical Field (Ecrit); 1.3.3 On-Resistance (RDS(on)); 1.3.4 The Two-Dimensional Electron Gas; 1.4 The Basic GaN Transistor Structure; 1.4.1 Recessed Gate Enhancement-Mode Structure; 1.4.2 Implanted Gate Enhancement-Mode Structure; 1.4.3 pGaN Gate Enhancement-Mode Structure; 1.4.4 Cascode Hybrid Enhancement-Mode Structure; 1.4.5 Reverse Conduction in HEMT Transistors

1.5 Building a GaN Transistor1.5.1 Substrate Material Selection; 1.5.2 Growing the Heteroepitaxy; 1.5.3 Processing the Wafer; 1.5.4 Making Electrical Connection to the Outside World; 1.6 Summary; References; 2 GaN Transistor Electrical Characteristics; 2.1 Introduction; 2.2 Key Device Parameters; 2.2.1 Breakdown Voltage (BVDSS) and Leakage Current (IDSS); 2.2.2 On-Resistance (RDS(on)); 2.2.3 Threshold Voltage (VGS(th) or Vth); 2.3 Capacitance and Charge; 2.4 Reverse Conduction; 2.5 Thermal Resistance; 2.6 Transient Thermal Impedance; 2.7 Summary; References; 3 Driving GaN Transistors

3.1 In…