Title Statements
- Full title :GaN transistors for efficient power conversion / Alex Lidow [and three others].
Summary
This second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, it serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. Topics include: discussions on device-circuit interactions; practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors. --
Read More ↓Edition Statements
- Publication Date:©2015
- Edition:Second edition
Publication Statements
- Publisher(s):Wiley
- Place of Publication:Chichester, England
- Language:eng
- Publication Date:©2015
The Physical Object
- Description:1 online resource (269 pages) : : illustrations (some color), tables
Edition Identifiers
- ISBN:9781118844793, 1118844793, 9781118844786, 1118844785, 1118844769, 9781118844762, 9781118844779, 1118844777
- oclc:ocn884595415
- LC Classification:TK7871.95
- Dewey Decimal:621.3815/284
Table of Contents
GaN Transistors for Efficient Power Conversion; Contents; Foreword; Acknowledgments; 1 GaN Technology Overview; 1.1 Silicon Power MOSFETs 1976-2010; 1.2 The GaN Journey Begins; 1.3 Why Gallium Nitride?; 1.3.1 Band Gap (Eg); 1.3.2 Critical Field (Ecrit); 1.3.3 On-Resistance (RDS(on)); 1.3.4 The Two-Dimensional Electron Gas; 1.4 The Basic GaN Transistor Structure; 1.4.1 Recessed Gate Enhancement-Mode Structure; 1.4.2 Implanted Gate Enhancement-Mode Structure; 1.4.3 pGaN Gate Enhancement-Mode Structure; 1.4.4 Cascode Hybrid Enhancement-Mode Structure; 1.4.5 Reverse Conduction in HEMT Transistors.
1.5 Building a GaN Transistor1.5.1 Substrate Material Selection; 1.5.2 Growing the Heteroepitaxy; 1.5.3 Processing the Wafer; 1.5.4 Making Electrical Connection to the Outside World; 1.6 Summary; References; 2 GaN Transistor Electrical Characteristics; 2.1 Introduction; 2.2 Key Device Parameters; 2.2.1 Breakdown Voltage (BVDSS) and Leakage Current (IDSS); 2.2.2 On-Resistance (RDS(on)); 2.2.3 Threshold Voltage (VGS(th) or Vth); 2.3 Capacitance and Charge; 2.4 Reverse Conduction; 2.5 Thermal Resistance; 2.6 Transient Thermal Impedance; 2.7 Summary; References; 3 Driving GaN Transistors.
3.1 …
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