III-Nitride Devices and Nanoengineering

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device.

2. Issue of InGaN, AlInGaN, AlGaN material system.

Preface; CONTENTS; Chapter 1 An Overview of the Development of Major Light Sources: From Light Bulbs to Solid State Lighting Y.S. Liu; 1. Introduction; 1.1 Major milestones in the development of light sources; 2. Incandescence light bulbs; 3. Fluorescence light; 4. Coherent light sources: semiconductor lasers; 5. GaN-based blue and white LED; 6. DOE ALITE 1995; 7. Japan MITI's "21st Century Solid State Lighting Project" 1998; 8. USA Next Generation Lighting Initiative Alliance (NGLIA); 9. China's National SSL Program 2006; 10. Taiwan's solid state lighting program.

10.1 GaN-based solid state lighting research10.2 Next Generation Semiconductor Lighting Research and Development Consortium (2002-2005); 11. Conclusion; References; Chapter 2 High Pressure Bulk Crystal Growth of (Ga, Al)N P. Geiser, J. Jun, B. Batlogg and J. Karpinski; 1. Introduction; 2. The group-III nitrides AlN, GaN and InN; 2.1 Crystal structure; 2.2 Material properties, defects and dopants; 2.3 Direct synthesis of group-III nitrides; 3. Growth of group-III nitride bulk single crystals; 3.1 High nitrogen pressure apparatus for crystal growth (HNPSG).

3.2 Cubic anvil cell for AlxGa1-xN crystal growth (CAC)4. Resul…