III-nitride devices and nanoengineering

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Ch. 1. An overview of the development of major light sources: from light bulbs to solid state lighting. 1. Introduction. 2. Incandescence light bulbs. 3. Fluorescence light. 4. Coherent light sources: semiconductor lasers. 5. GaN-based blue and white LED. 6. DOE ALITE 1995. 7. Japan MITI's "21st Century Solid State Lighting Project" 1998. 8. USA Next Generation Lighting Initiative Alliance (NGLIA). 9. China's National SSL Program 2006. 10. Taiwan's solid state lighting program -- ch. 2. High pressure bulk crystal growth of (Ga, A)N. 1. Introduction. 2. The group-III nitrides AlN, GaN and InN. 3. Growth of group-III nitride bulk single crystals. 4. Results and discussion. 5. Conclusions and outlook -- ch. 3. Structural and optical investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition. 1. Introduction. 2. Experimental. 3. Structural properties of InGaN/GaN MQWs. 4. Optical properties of InGaN/GaN MQW LEDs. 5. Special electron microscopy of InGAN/GAN MQWs. 6. Special luminescence spectroscopy of InGaN/GaN MQWs. 7. Summary -- ch. 4. MOCVD growth and efficiency improvement for ultraviolet light emitting diodes. 1. Introdu…