Title Statements
- Full title :Materials and process characterization / edited by Norman G. Einspruch, Graydon B. Larrabee.
Summary
Materials and Process Characterization.
Read More ↓Edition Statements
- Publication Date:1983.
Publication Statements
- Publisher(s):Academic Press
- Place of Publication:New York
- Language:eng
- Publication Date:1983.
The Physical Object
- Description:1 online resource (xii, 601 pages) : : illustrations
Edition Identifiers
- ISBN:9781483217734, 1483217736
- oclc:ocn897473385
- LC Classification:TK7874
- Dewey Decimal:621.39/5
Table of Contents
Front Cover; Materials and Process Characterization; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Characterization of Silicon Materials for VLSI; I. INTRODUCTION; II. CHARACTERIZATION TECHNIQUES; III. POLYCRYSTALLINE SILICON; IV. SINGLE-CRYSTAL SILICON; V. SLICE PREPARATION; VI. SUMMARY; APPENDIX. PROPERTIES OF 54 ELEMENTS IN SINGLE-CRYSTAL SILICON; REFERENCES; Chapter 2. Characterization of Silicon Expitaxial Films; I. INTRODUCTION; II. EPITAXIAL-GROWTH PROCESS; III. ELECTRICAL CHARACTERIZATION; IV. PHYSICAL AND OPTICAL CHARACTERIZATION.
v. EPITAXIAL-DEFECT CHARACTERIZATIONVI. EPITAXIAL-DEFECT MEASUREMENTS; VII. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 3. Characterization of Dielectric Films; I. INTRODUCTION AND BACKGROUND; II. BASIC STRUCTURE AND PROPERTIES OF GATE DIELECTRICS; III. THE CLASSIFICATION OF DIELECTRIC CHARGES; IV. THE SPATIAL LOCATION OF OXIDE CHARGE; V. THE AMOUNT AND ENERGY LOCATION OF INTERFACE TRAPS; VI. TEMPERATURE EFFECTS ON MOBILE IONIC CHARGE; VII. INJECTED CHARGE TRAPPING IN OXIDE FILMS; VIII. THE ROLE OF DIELECTRIC LAYER CHARACTERIZATION IN VLSI; ACKNOWLEDGMENT; REFERENCES.
Chapter 4. The Status of Dry-Developed Resi…
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