Photonics and electronics with germanium

Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and p.

Cover; Title Page; Copyright; Contents; Preface; List of Contributors; Chapter 1 Defects in Germanium; 1.1 Introduction; 1.2 Methods for Studying Defects and Impurities; 1.2.1 Experimental Techniques; 1.2.2 First-Principles Calculations; 1.3 Impurities; 1.3.1 Shallow Dopants; 1.3.2 Hydrogen; 1.4 Intrinsic Defects; 1.4.1 Vacancies; 1.4.1.1 Electronic Structure; 1.4.1.2 Formation Energy; 1.4.1.3 Defect Levels; 1.4.1.4 Comparison with Silicon; 1.4.1.5 Diffusion; 1.4.2 Self-Interstitials; 1.4.3 Dangling Bonds; 1.4.3.1 Electronic Levels; 1.4.4 Impact on Devices; 1.5 Summary; References.

Chapter 2 Hydrogen in Ge2.1 Introduction; 2.2 Properties of Hydrogen in Ge; 2.2.1 Incorporation of Hydrogen; 2.2.2 Isolated Hydrogen; 2.2.3 Hydrogen Dimers; 2.2.3.1 Interstitial H2; 2.2.3.2 The H2* Defect; 2.2.3.3 H2 Molecules in Hydrogen-Induced Platelets; 2.2.3.4 Complexes of Hydrogen with Other Defects; 2.3 Hydrogen Passivation of Shallow Donors and Acceptors in Ge; 2.3.1 Donor Passivation; 2.3.2 Hydrogen in p-type Ge; 2.3.3 Schottky Contacts on p-type Ge; 2.4 Summary; Acknowledgments; References.

Chapter 3 Epitaxy of Ge Layers on Blanket and Patterned Si(001) for Nanoelectronics and Optoelectronic…