Plasma processing for VLSI

Plasma processing for VLSI

by Brown, Dale M. Einspruch, Norman G.

Type Book
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Plasma Processing for VLSI.

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Title Statements

  • Full title :Plasma processing for VLSI / edited by Norman G. Einspruch, Dale M. Brown.

Summary

Plasma Processing for VLSI.

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Edition Statements

  • Publication Date:1984.

Publication Statements

  • Publisher(s):Academic Press
  • Place of Publication:New York
  • Language:eng
  • Publication Date:1984.

The Physical Object

  • Description:1 online resource (xiv, 527 pages) : : illustrations

Edition Identifiers

  • ISBN:9781483217758, 1483217752
  • oclc:ocn893872998
  • LC Classification:TK7874
  • Dewey Decimal:621.381/73

Table of Contents

Front Cover; Plasma Processing forVLSI; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. The History of Plasma Processing; I. INTRODUCTION; II. EARLY DEVELOPMENTS; III. INTRODUCTION OF PLASMA PROCESSING TOSEMICONDUCTOR MANUFACTURING, 1971-1978; IV. FULL-SCALE COMMITMENT TO DRY-PROCESSTECHNOLOGY, 1978-1983; V. CHALLENGES AND OPPORTUNITIES FOR PLASMATECHNOLOGY, 1983-1988; REFERENCES; Part A: Deposition; Chapter 2. Sputtering for VLSI; I. INTRODUCTION; II. CONTACT METALLIZATION; III. DIFFUSION BARRIERS; IV. SCHOTTKY DIODE METALLIZATION; V. COSPUTTERED ALUMINUM ALLOYS.

VI. REFRACTORY SILICIDES IN GATE METALLIZATIONVII. FILM STRESS; VIII. DIELECTRICS; IX. DIE ATTACH; X. SUMMARY AND FUTURE DIRECTIONS; REFERENCES; Chapter 3. Plasma-Enhanced Chemical Vapor Deposition of Transition Metalsand Transition MetalSuicides; I. INTRODUCTION; II. PLASMA-ENHANCED DEPOSITION; III. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 4. Plasma-Enhanced Chemical Vapor Depositionof Dielectrics; 1. INTRODUCTION; II. GENERAL PRINCIPLES; III. SPECIFIC MATERIALS; IV. EQUIPMENT FOR PECVD OF INORGANIC DIELECTRICS; V. SUMMARY; REFERENCES; Part B: Lithography; Chapter 5. Trilayer Resist.

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