Title Statements
- Full title :Plasma processing for VLSI / edited by Norman G. Einspruch, Dale M. Brown.
Summary
Plasma Processing for VLSI.
Read More ↓Edition Statements
- Publication Date:1984.
Publication Statements
- Publisher(s):Academic Press
- Place of Publication:New York
- Language:eng
- Publication Date:1984.
The Physical Object
- Description:1 online resource (xiv, 527 pages) : : illustrations
Edition Identifiers
- ISBN:9781483217758, 1483217752
- oclc:ocn893872998
- LC Classification:TK7874
- Dewey Decimal:621.381/73
Table of Contents
Front Cover; Plasma Processing forVLSI; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. The History of Plasma Processing; I. INTRODUCTION; II. EARLY DEVELOPMENTS; III. INTRODUCTION OF PLASMA PROCESSING TOSEMICONDUCTOR MANUFACTURING, 1971-1978; IV. FULL-SCALE COMMITMENT TO DRY-PROCESSTECHNOLOGY, 1978-1983; V. CHALLENGES AND OPPORTUNITIES FOR PLASMATECHNOLOGY, 1983-1988; REFERENCES; Part A: Deposition; Chapter 2. Sputtering for VLSI; I. INTRODUCTION; II. CONTACT METALLIZATION; III. DIFFUSION BARRIERS; IV. SCHOTTKY DIODE METALLIZATION; V. COSPUTTERED ALUMINUM ALLOYS.
VI. REFRACTORY SILICIDES IN GATE METALLIZATIONVII. FILM STRESS; VIII. DIELECTRICS; IX. DIE ATTACH; X. SUMMARY AND FUTURE DIRECTIONS; REFERENCES; Chapter 3. Plasma-Enhanced Chemical Vapor Deposition of Transition Metalsand Transition MetalSuicides; I. INTRODUCTION; II. PLASMA-ENHANCED DEPOSITION; III. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 4. Plasma-Enhanced Chemical Vapor Depositionof Dielectrics; 1. INTRODUCTION; II. GENERAL PRINCIPLES; III. SPECIFIC MATERIALS; IV. EQUIPMENT FOR PECVD OF INORGANIC DIELECTRICS; V. SUMMARY; REFERENCES; Part B: Lithography; Chapter 5. Trilayer Resist.
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