Title Statements
- Full title :Semiconductor Nanowires. / edited by Anna Fontcuberta I. Morral, Shadi A. Dayeh and Chennupati Jagadish.
Edition Statements
- Publication Date:2015.
Publication Statements
- Publisher(s):Academic Press is an imprint of Elsevier
- Place of Publication:Waltham, MA
- Language:eng
- Publication Date:2015.
The Physical Object
- Description:1 online resource (x, 314 pages : : illustrations
Edition Identifiers
- ISBN:9780128030448, 0128030445, 0128030275, 9780128030271
- oclc:ocn930703413
- LC Classification:TK7874.85
- Dewey Decimal:621.3815
Table of Contents
Front Cover; Semiconductor Nanowires I: Growth and Theory; Copyright; Contents; Contributors; Preface; Chapter One: Theory of VLS Growth of Compound Semiconductors; 1. Introduction; 2. Fundamentals of VLS Growth; 3. Chemical Potentials for Au-Catalyzed VLS Growth of III-V Nanowires; 4. Growth Kinetics of III-V Nanowires; 5. Transport-Limited Growth of Nanowires; 6. Nucleation Rate in VLS Nanowires; 7. Position-Dependent Nucleation in Nanowires; 8. Self-consistent Growth Equation; 9. Ga-Catalyzed Growth of GaAs Nanowires; 10. Formation of Ternary Au-Catalyzed III-V Nanowires.
11. Impact of Growth Conditions on the Crystal Structure of III-V NanowiresReferences; Chapter Two: Strain in Nanowires and Nanowire Heterostructures; 1. Introduction; 1.1. Scope; 1.2. Heterostructures, Mismatch, and Accommodation; 1.3. Nanowire Specificities; 2. Methods of Calculation and Measurement of Strain in Nanowires; 2.1. Calculation of Elastic Strain; 2.2. Experimental Assessment of Elastic Strain and Plastic Relaxation; 3. Axial Heterostructures; 3.1. Calculation of Elastic Relaxation in Axial Heterostructures.
3.2. Critical Dimensions for the Plastic Relaxation of Axial Heterostructures3.2.1. Theo…
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