SiC power module design

SiC power module design: performance, robustness and reliability

by Castellazzi, Alberto Irace, Andrea

Type Book
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Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes

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Title Statements

  • Full title :SiC power module design : performance, robustness and reliability / edited by Alberto Castellazzi and Andrea Irace

Summary

Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes

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Edition Statements

  • Publication Date:©2022

Publication Statements

The Physical Object

  • Description:1 online resource : illustrations

Edition Identifiers

  • ISBN:178561908X, 9781785619083
  • oclc:on1283860133
  • LC Classification:QC611.8.W53
  • Dewey Decimal:621.38152

Table of Contents

Preface -- 1. SiC power MOSFETs and their application / Alberto Castellazzi and Andrea Irace -- 2. Anatomy of a multi-chip power module / Cyrille Duchesne, Philippe Lasserre, and Emmanuel Batista -- 3. Established module design and transfer to SiC technology / Katsuaki Saito -- 4. Temperature-dependent modeling of SiC power MOSFETs for within- and out-of-SOA simulations / Vincenzo d'Alessandro, Michele Riccio, and Andrea Irace -- 5. Optimum module design I: electrothermal / Antonio Pio Catalano, Ciro Scognamillo, Vincenzo d'Alessandro, and Lorenzo Codecasa -- 6. Optimum module design II: impact of parameter design spread / Michele Riccio, Alessandro Borghese, Vincenzo d'Alessandro, Luca Maresca, and Andrea Irace -- 7. Optimum module design III: Electromagnetic / Cyrille Duchesne, Philippe Lasserre, and Emmanuel Batista / 8. Power module lifetime evaluation methodologies / Noriyuki Miyazaki, Nobuyuki Shishido, and Yutaka Hayama -- 9. High-temperature capable SiC power modules by Ag sintering on various metal interfaces / Chuantong Chen and Katsuaki suganuma -- 10. Advanced die-attach validation technologies / Keisuke Wakamoto, Ryosuke Matsumoto, and Takahiro Namazu -- 11. Power mod…

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Subjects

Semi-conducteurs à large bande interdite Silicon carbide Wide gap semiconductors

Writers

Castellazzi, Alberto Irace, Andrea

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