Strain-engineered MOSFETs

Strain-engineered MOSFETs

by Maiti, C. K.

Type Book
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"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE p…

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Title Statements

  • Full title :Strain-engineered MOSFETs / .K. Maiti, T.K. Maiti.

Summary

"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--

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Edition Statements

  • Publication Date:2013.

Publication Statements

  • Publisher(s):CRC Press
  • Place of Publication:Boca Raton, Fla
  • Language:eng
  • Publication Date:2013.

The Physical Object

  • Description:1 online resource (xix, 300 pages)

Edition Identifiers

  • ISBN:9781315216577, 1315216574, 9781138075603, 1138075604, 9781466500556, 1466500557
  • DOI:10.1201/9781315216577
  • oclc:on1110588641
  • LC Classification:TK7871.99.M44
  • Dewey Decimal:621.3815284

Table of Contents

1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions.

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Subjects

Circuits intégrés -- Tolérance aux faut… Contraintes (Mécanique) Integrated circuits -- Fault tolerance Metal oxide semiconductor field-effect … Strain Strains and stresses Stress Transistors MOSFET -- Fiabilité

Writers

Maiti, C. K. Maiti, T. K.

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