Strain-engineered MOSFETs
by Maiti, C. K.
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE p…
Read More ↓Title Statements
- Full title :Strain-engineered MOSFETs / C.K. Maiti, T.K. Maiti.
Summary
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--
Read More ↓Edition Statements
- Publication Date:2013.
Publication Statements
- Publisher(s):CRC Press
- Place of Publication:Boca Raton, Fla
- Language:eng
- Publication Date:2013.
The Physical Object
- Description:1 online resource (xix, 300 p.) : : illustrations
Edition Identifiers
- ISBN:9781466503472, 1466503475
- oclc:ocn940204767
Table of Contents
1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions.
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