Trap level spectroscopy in amorphous semiconductors

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Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most used spectroscopic techniques but also describes their advantages and disadvantages. Provides information on the most common spectroscopic techniquesDiscusses the advantages and disadvantages of each technique.

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Title Statements

Full title :Trap level spectroscopy in amorphous semiconductors / Viktor I. Mikla and Victor V. Mikla.

Summary

Edition Statements

Publication Date:2010.
Edition:1st ed

Publication Statements

Publisher(s):Elsevier
Place of Publication:Amsterdam
Language:eng
Publication Date:2010.

The Physical Object

Description:1 online resource (vi, 120 pages) : : illustrations

Edition Identifiers

ISBN:9780123847164, 0123847168, 9780123847157, 012384715X
oclc:ocn664571255
LC Classification:QC611.8.A5
Dewey Decimal:537.6223

Front Cover; Trap Level Spectroscopy in Amorphous Semiconductors; Copyright Page; Contents; Acknowledgments; Chapter 1 Defect States Spectroscopy in Amorphous Semiconductors; Chapter 2 Thermally Stimulated Depolarization Currents in Amorphous Chalcogenides; Chapter 3 Carrier Transport Processes in Amorphous Solids; Chapter 4 Time-of-Flight Experiments in Amorphous Chalcogenide Semiconductors; Chapter 5 Xerographic Spectroscopy of States in Mobility Gap; Chapter 6 Photoinduced Effects on States in the Mobility Gap.

Subjects

Amorphous semiconductors -- Defects Amorphous semiconductors -- Spectra Deep level transient spectroscopy SCIENCE -- Physics Semi-conducteurs amorphes -- Défauts Semi-conducteurs amorphes -- Spectre Spectroscopie DLTS