Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Semiconductor Based Micro/Nano Devices

by Seo, Jung-Hun

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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their l…

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Title Statements

  • Full title :Wide Bandgap Semiconductor Based Micro/Nano Devices / Seo, Jung-Hun.

Summary

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

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Edition Statements

  • Publication Date:2019.

Publication Statements

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The Physical Object

  • Description:1 online resource

Edition Identifiers

  • ISBN:9783038978428, 3038978426
  • oclc:on1126143472

Writers

Seo, Jung-Hun

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