Title Statements
- Full title :3D IC devices, technologies, and manufacturing / Hong Xiao.
Summary
This book discusses the advantages of 3D devices and their applications in dynamic random access memory (DRAM), 3D-NAND flash, and advanced-technology-node CMOS ICs. Topics include the development of DRAM cell transistors and storage node capacitors; the manufacturing process of advanced buried-word-line DRAM; 3D FinFET CMOS IC devices; scaling trends of CMOS logic; devices that may be used in the "post-CMOS" era; and 3D technologies, such as the 3D-wafer process integration of silicon-on-ILD and TSV-based 3D packaging.
Read More ↓Edition Statements
- Publication Date:2016
Publication Statements
- Publisher(s):SPIE Press
- Place of Publication:Bellingham, Washington, USA
- Language:eng
- Publication Date:2016
The Physical Object
- Description:xi, 189 pages ; : 26 cm
Edition Identifiers
- ISBN:9781510601468, 1510601465
- oclc:ocn945571309
- LC Classification:TK7874.893
- Dewey Decimal:621.3815
Table of Contents
Preface -- Manufacturing processes of 3D IC devices -- Introduction -- 3D devices in the DRAM and BWL DRAM process -- Brief summary of DRAM -- Review questions -- 3D-NAND flash and its manufacturing process -- Introduction -- 3D-NAND flash memory manufacturing processes -- 3D-NAND summary and discussion -- Review questions -- High-k, metal-gate FinFET CMOS manufacturing process -- Introduction -- FinFET basics -- FinFET process -- Advanced FinFET CMOS process -- Advanced FinFET SRAM -- FinFET CMOS scaling -- Review questions -- Summary and future trends of the 3D IC process -- Scaling MOSFET technology after 14 nm -- Scaling and development of memory devices -- 3D packaging -- Other 3D devices and 3D IC processing techniques -- The end of Moore's Law?
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