Chemistry in microelectronics

Chemistry in microelectronics

by Tiec, Yannick Le

Type Book
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Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition,…

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Title Statements

  • Full title :Chemistry in microelectronics / edited by Yannick Le Tiec.

Summary

Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functiona.

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Edition Statements

  • Publication Date:2013.

Publication Statements

  • Publisher(s):ISTE
  • Place of Publication:London
  • Language:eng
  • Publication Date:2013.

The Physical Object

  • Description:1 online resource (xii, 372 pages) : : illustrations.

Edition Identifiers

  • ISBN:9781118580141, 1118580141, 1118578120, 9781118578124, 1118578074, 9781118578070, 1299277306, 9781299277304
  • oclc:ocn841168731
  • LC Classification:TK7874
  • Dewey Decimal:621.381

Table of Contents

Title Page; Cpntents; Preface; Chapter 1. Chemistry in the "Front End of the Line" (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts; 1.1. Introduction; 1.2. Arrangement of the gate; 1.2.1. Generalities; 1.2.2. Silicon nitriding processes; 1.2.3. The introduction of the High K/metal gate stacks; 1.2.4. Conclusion; 1.3. Chemistry of crystalline materials; 1.3.1. Generalities; 1.3.2. A few basic ideas about epitaxy; 1.3.3. Surface preparation prior to epitaxy; 1.3.4. Low-temperature Si and SiGe growth: the comparison of three precursors (silane, disilane and dichlorosilane)

1.3.5. Integration and conclusion1.4. Contact areas between the gate and the "source" and "drain"; 1.4.1. Generalities; 1.4.2. Introduction to the conventional NiSi process for sub-90 nm nodes; 1.4.3. Implications for the SALICIDE process of the recent technology evolutions; 1.4.4. Conclusion; 1.5. General conclusion; 1.6. List of Abbreviations; 1.7. Bibliography; Chapter 2. Chemistry in Interconnects; 2.1. Introduction; 2.2. Interconnects: generalities and background; 2.2.1. What conditions are required for an interconnect?; 2.2.2. The main technological advancements; 2.2.3. Conclusion

2.3. Dielectric deposi…

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  • Chemistry in Microelectronics -- (.pdf)

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  • Chemistry in Microelectronics -- (.pdf)

    PDF · 7.9 MB · updated