MOS interface physics, process and characterization

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"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"--

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Title Statements

Full title :MOS interface physics, process and characterization / Shengkai Wang, Xiaolei Wang.

Summary

Edition Statements

Publication Date:2022.
Edition:First edition

Publication Statements

Publisher(s):CRC Press
Place of Publication:Boca Raton
Language:eng
Publication Date:2022.

The Physical Object

Description:x, 281 pages ; : 24 cm

Edition Identifiers

ISBN:9781032106274, 1032106271, 9781032106281, 103210628X
oclc:on1246676046
LC Classification:TK7871.99.M44
Dewey Decimal:621.3815/284

Subjects

Circuits intégrés -- Recherche Integrated circuits -- Research Metal oxide semiconductors -- Design an… Physique de l'état solide -- Expériences Semi-conducteurs -- Jonctions Semiconductors -- Junctions Solid state physics -- Experiments