Title Statements
- Full title :MOS (metal oxide semiconductor) physics and technology / E.H. Nicollian, J.R. Brews.
Edition Statements
- Publication Date:©1982.
Publication Statements
- Publisher(s):Wiley
- Place of Publication:New York
- Language:eng
- Publication Date:©1982.
The Physical Object
- Description:xv, 906 pages : : illustrations ; : 25 cm
Edition Identifiers
- ISBN:0471085006, 9780471085003
- oclc:ocn421548325
- LC Classification:TK7871.99M44N52 1982
Table of Contents
Field effect -- Metal oxide silicon capacitor at low frequencies -- Metal oxide silicon capacitor at intermediate and high frequencies -- Extraction of interface trap properties from the conductance -- Interfacial nonuniformities -- Experimental evidence for interface trap properties -- Extraction of interface trap properties from the capacitance -- Measurement of silicon properties -- Charges, barrier heights, and flatband voltage -- Charge trapping in the oxide -- Instrumentation for measuring capacitor characteristics -- Oxidation of silicon technology -- Control of oxide charges -- Models of the interface.
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