Strain-engineered MOSFETs
by Maiti, C. K.
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE p…
Read More ↓Title Statements
- Full title :Strain-engineered MOSFETs / C.K. Maiti, T.K. Maiti.
Summary
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--
Read More ↓Edition Statements
- Publication Date:©2013.
Publication Statements
- Publisher(s):Taylor & Francis
- Place of Publication:Boca Raton
- Language:eng
- Publication Date:©2013.
The Physical Object
- Description:xix, 300 pages : : illustrations ; : 24 cm
Edition Identifiers
- ISBN:9781466500556, 1466500557
- oclc:ocn809563361
- LC Classification:TK7871.99.M44
- Dewey Decimal:621.3815/284
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