Title Statements
- Full title :Transistors : from crystals to integrated circuits / M. Levinshtein & G. Simin ; translated by Minna M. Perelman.
Edition Statements
- Publication Date:©1998.
Publication Statements
- Publisher(s):World Scientific
- Place of Publication:Singapore
- Language:eng
- Publication Date:©1998.
The Physical Object
- Description:1 online resource (xii, 241 pages) : : illustrations
Edition Identifiers
- ISBN:981024861X, 9789810248611
- oclc:ocm49570025
- LC Classification:TK7871.85
- Dewey Decimal:621.381528
Table of Contents
pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simpl…
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