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The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current densities. The power …
"This volume covers not only the basic technologies, but also the latest advances in these areas. Organized into three main sections, coverage begins with discussions on the materials used and their key properties, including a comparison of those properties with the requirements…
