III-nitrides

The frontiers of micro/nano photonic structures based light emitting device research spans a variety of III-nitride wide-bandgap semiconductors to achieve high efficiencies. The development of compact, robust, milliwatt-level LEDs that emit in ultraviolet (UV) and deep-ultraviol…

Due to the absence of commercially available native substrates, Aluminum Gallium Nitride (AlGaN) deep ultraviolet light emitting diodes are fabricated on lattice mismatched electrically insulating sapphire substrate requiring laterally conducting device designs. Lateral conducti…