The tri-gate FET has been hailed as the biggest breakthrough in transistor technology in the last 20 years. The increase in device performance (faster switching, less delay, improved short channel effects, etc.) coupled with the reduction in device size, would allow for huge gai…
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Limitation of near future scaling down of conventional silicon technology stimulated the quest for alternative technologies in nanometer-scale materials and devices in recent years. Since the discovery of carbon nanotubes, there has been great interest in the synthesis and chara…