NANOWIRES

Fundamental properties of semiconductor nanowires

0 Type: Book

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires' growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functional…

Fundamental properties of semiconductor nanowires

0 Type: Book

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires' growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functional…

Fundamental properties of semiconductor nanowires

0 Type: Book

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires' growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functional…

Nanotubes (inner diameter of 8nm and outer diameter of 10nm with a length of up to several hundred nm) and nanowires (diameter 20 – 50nm and up to several μm in length) of TiO₂-B have been synthesised and characterised for the first time. These exhibit excellent properties as a …

Sonochemical growth of zinc oxide (ZnO) nanowires and nanowalls is a relatively new synthetic technique that allows for room ambient growth and large scale production. This synthesis technique allows for services ranging from gas sensors and UV switches. In comparison to the wid…

The band structure and carrier dynamics of GaAs, GaAs/GaP and InP semiconductor nanowires is explored using a variety of optical spectroscopy techniques including two newly developed techniques called Photomodulated and Transient Rayleigh scattering spectroscopy. The stress and …

Multilayer "Co" /"Sb" thin films created via electron-beam physical vapor deposition are known to exhibit thermally activated dynamics. Scanning tunneling microscopy has indicated that the "Co" forms nanoparticles within an "Sb" matrix during deposition and subsequently forms na…

The aggressive downsizing of the transistor will continue for at least another decade. The critical feature size (physical gate length) of transistors will drop to 5 nm in 2020 (referred to as the 11 nm technology node). In the sub-10 nm range, a variety of low-dimensional mater…

As technology journalist David Pogue recounted, “If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks.” The electronics industry is one whic…