This research fabricated and tested various graphene-related 1D, 2D and 3D materials. We described how using specifically designed graphene foam (GF) as templates can transform its unique structures and excellent properties to new materials. Graphene, GF, Polypyrrole (PPY), Poly…
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In the TRISO (tristructural isotropic) coated fuel particle used in the High Temperature Reactor, the most important layer is a silicon carbide layer which acts as a pressure vessel. In this study, we have focused our study on the investigation of the Young’s modulus, hardness, …
Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant…
The goal of this work is to study transport of gas mixtures through nanoporous membranes especially silicon carbide membranes. In the first stage of this research, molecular dynamics simulation has been performed to study the transport and separation of gas mixtures through a si…
Silicon is the most commonly used semiconductor material in the electronics industry today. Silicon carbide (SiC), however, has superior properties such as wide band gap, high breakdown field, and high thermal conductivity which make it suitable for high power, high frequency an…
This dissertation focuses on the preparation of silicon carbide (SiC) ceramic membranes on SiC substrates. An original technique of SiC porous substrate preparation using sintering methods was developed during the work for the completion of the dissertation. The resulting SiC su…
Ceramic materials are one of the most promising materials for wide variety of technical applications such as automotive, aerospace, medical, and other applications. They have very high strengths and high melting points relative to metals. However, low fracture toughness is one o…
A laser direct write and doping (LDWD) system is designed and utilized for direct metallization and selective area doping in different SiC polytypes, GaN and in dielectrics including AlN. Laser direct metallization in 4H- and 6H-SiC generates metal-like conductive phases that ar…
This research work discusses the effort at the Electrical and Computer Engineering (ECE) department at the University of Missouri Columbia (UMC) in developing this technology through simulation and experiments with SiC material. Specifically, the rationale for employing extrinsi…
Research is being conducted for a high-performance building block for high frequency and high temperature applications that combine lower costs with improved performance and manufacturability. Researchers have focused their attention on new semiconductor materials for use in dev…
This thesis presents the work on analytical modeling and simulation of a silicon carbide (SiC) power MOSFET, model verification with test data, and device characterization and parameter extraction of the SPICE model. The development of temperature models for a lateral as well as…
This thesis reports the isotopic compositions of different elements in a large number of presolar SiC and oxide grains in order to further increase our knowledge of nucleosynthesis in asymptotic giant branch (AGB) stars, the chemical evolution of the galaxy, and the lifetimes of…
This thesis examines preparation of silicon carbide membranes and investigates their reactive applications to produce hydrogen. Membranes are typically used in reacting systems to selectively remove one or more of the reaction products, driving the reaction to further completion…