Silicon

Using a variable temperature scanning tunneling microscope, we have studied several adsorbates on silicon surfaces. We have studied the adsorption characteristics of H\sb2S on Si(111)-(7 × 7). H\sb2S adsorbs dissociatively at sub-monolayer coverage, from 50 to 300 K, with HS bon…

A self-aligned process was developed for the fabrication of gated Si field emission devices with precise control on the gate-tip spacing, gate diameter, tip sharpness, and tip position. Emitter tips were etched in Cl\sb2 plasmas generated by electron cyclotron resonance and indu…

Recently emerged perovskite materials show superior features like high efficiency, defect tolerance, facile synthesis, bandgap tunability and wide color gamut over their rivals in photonics applications. On the other hand, metals have interesting characteristics as they go small…

Trivalent lantanit iyonlarının fotolüminesans özellikleri, tıbbi teşhis, hücre görüntüleme, güneş panelleri ve fonksiyonel nanomalzemeler gibi geniş uygulanabilirlikleri nedeniyle uzun yıllardır muazzam bir ilgi uyandırmaktadır. 3.8 eV geniş bir bant aralıklı olması sebebiyle La…

An alternative method for the growth of crack free, dislocation reduced III-Nitride layers on Silicon substrate has been developed that relies on formation of an ion implanted defective layer in the substrate with implantation taking place in the presence of AlN buffer layer. Th…