Transparent oxide semiconducting films have continued to receive considerable attention, from a fundamental and application-based point of view, primarily because of their useful fundamental properties. Of particular interest is zinc oxide (ZnO), an n-type semiconductor that exh…
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In this study an effort has been made to develop a low temperature process for fabricating a thin film transistor. Thin films of silicon nitride and polysilicon have been developed for the gate dielectric and channel region of thin film transistors. Optical, physical and electri…
In this work a fully photolithographically defined complementary metal oxide semiconductor (CMOS) device is fabricated. Particular focus was on the use of solution based materials for device integration. P-type and n-type materials were evaluated for use in an organic thin film …
This thesis work mainly examined the stability and reliability issues of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors under bias-illumination stress. Amorphous hydrogenated silicon has been the dominating material used in thin film transistors as a channel …