The continuous demand for high performance applications and simultaneous lowering of power consumption and manufacturing cost is driving the transistor size to sub-50nm regime. Although, aggressive transistor scaling has resulted in increased integration density and improved dev…
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This thesis presents the work on analytical modeling and simulation of a silicon carbide (SiC) power MOSFET, model verification with test data, and device characterization and parameter extraction of the SPICE model. The development of temperature models for a lateral as well as…