GaN transistors for efficient power conversion
by Lidow, Alex
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost.
Read More ↓Title Statements
- Full title :GaN transistors for efficient power conversion / Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch.
Summary
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost.
Read More ↓Edition Statements
- Publication Date:2015.
- Edition:Second edition
Publication Statements
- Publisher(s):Wiley
- Place of Publication:Chichester, West Sussex
- Language:eng
- Publication Date:2015.
The Physical Object
- Description:xiv, 250 pages : : illustrations ; : 25 cm
Edition Identifiers
- ISBN:9781118844762, 1118844769
- oclc:ocn881387664
- LC Classification:TK7871.95
- Dewey Decimal:621.3815/284
Table of Contents
1. GaN Technology Overview -- 2. GaN Transistor Electrical Characteristics -- 3. Driving GaN Transistors -- 4. Layout Considerations for GaN Transistor Circuits -- 5. Modeling and Measurement of GaN Transistors -- 6. Hard-Switching Topologies -- 7. Resonant and Soft-Switching Converters -- 8. RF Performance -- 9. GaN Transistors for Space Applications -- 10. Application Examples -- 11. Replacing Silicon Power MOSFETs.
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GaN transistors for efficient power conversion
GaN transistors for efficient power conversion
GaN transistors for efficient power conversion
GaN transistors for efficient power conversion
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