Secondary ion mass spectroscopy of solid surfaces

This volume is devoted to the physics, instrumentation and analytical methods of secondary ion mass spectroscopy (SIMS) in relation to solid surfaces. It describes modern models of secondary ion formation and the factors influencing sensitivity of measurements and the range of applications. All the main parts of SIMS instruments are discussed in detail. Emphasising practical applications the book also considers the methods and analytical procedures for constitutional analysis of solids --- including metals, semiconductors, organic and biological samples. Methods of depth profiling, spatially multidimensional analysis and study of processes at the surface, such as adsorption, catalysis and oxidation, are given along with the application of SIMS in combination with other methods of surface analysis.

Originally published in 1987.

Preface -- Chapter 1. Physics olsecondary ion emIssion -- 1.1. Parameters of secondary ion emission -- 1.2. Effect of the primary ion energy and current on SIE -- 1.3. Effect of the target temperature on the SIE coefficient -- 1.4. Angular dependence of secondary ion emission -- 1.5. Secondary ion energy distribution -- 1.6. Effect of primary ions and target material on secondary ion yield -- 1.7. Effect of sample oxidation on STE -- 1.8. Polyatomic ion emission -- 1.9. Mechanism of ionization of ejected atoms References -- Chapter 2. SIMS instrumentation -- 2.1. Ion sources -- 2.2. Mass separation of primary beam -- 2.3. Primary and secondary ion optics -- 2.4. Mass spectrometers -- 2.5. Ion detection and vacuum systems -- 2.6. Mass-spectral microscopes -- 2.7. Ion microprobes References -- Chapter 3. Constitutional analysis of solids by SIMS -- 3.1. Analytical characteristics of SIMS -- 3.2. Qualitative constitutional analysis -- 3.3. Physical background of quantitative analysis -- 3.4. Methods of quantitative analysis -- 3.5. Analysis of organic and biological samples -- 3.6. Standards and cross-calibration of instruments References -- Chapter 4. In-depth analysis -- 4.1. Techn…