SiC materials and devices

SiC materials and devices

by Levinshteĭn, M. E., (Mikhail Efimovich) Rumyantsev, Sergey Shur, Michael

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Title Statements

  • Full title :SiC materials and devices / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein.

Edition Statements

  • Publication Date:2006-

Publication Statements

  • Publisher(s):World Scientific
  • Place of Publication:New Jersey
  • Language:eng
  • Publication Date:2006-

Notes

Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner.

The Physical Object

  • Description:volumes : : illustrations ; : 26 cm

Edition Identifiers

  • ISBN:9812568352, 9789812568359, 9789812703835, 9812703837
  • oclc:ocm71298024
  • LC Classification:QC611.8
  • Dewey Decimal:621.3815/2

Table of Contents

Sic Material Properties -- SiC Homoepitaxy and Heteroepitaxy -- Ohmic Contacts to SiC -- Silicon Carbide Schottky Barrier Diode -- High Power SiC PiN Rectifiers -- Silicon Carbide Diodes for Microwave Applications -- SiC Thyristors -- Silicon Carbide Static Induction Transistors.

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Subjects

Semi-conducteurs semiconductor Semiconductors SEMICONDUCTORS (MATERIALS) Silicon carbide -- Electric properties

Writers

Levinshteĭn, M. E., (Mikhail Efimovich) Rumyantsev, Sergey Shur, Michael

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