3D and circuit integration of MEMS
While improving circuit's speed and reducing its area have been the primary figure of merits in digital VLSI design, more efforts are now spent on minimizing power dissipation. This is becoming equally true for both high-performance chips, such as microprocessors, to reduce cool…
Yield and reliability are two factors affecting the profitability of semiconductor manufacturing. In the manufacturing process of modern VLSI semiconductor devices, gate-oxide defects have been found as one of the major causes for the reliability problems of CMOS integrated circ…
Otomotiv tarihinin başlarında gece sürüşünde görüşü sağlayan otomotiv aydınlatma ürünleri, sonrasında artan güvenlik ihtiyaçlarıyla beraber görülmeyi ve sinyalizasyonu sağlamaya başladı. Günümüzde bu ürünler aynı zamanda gelişen teknoloji ile oluşan imkanlar sayesinde aracın ve …
Silicon technologies have been the foundation building blocks of integrated digital and analog electronic circuits for almost four decades. Complementary Metal Oxide Semiconductor (CMOS) is an important silicon technology that is being used to create MicroElectroMechanical syste…
Sub-terahertz (THz) frequency bands, covering approximately 100 GHz - 600 GHz of the electromagnetic spectrum, and many uses such as in short range radars, spectrometers for detection of chemicals, electromagnetic imaging for medical applications (T-Ray) and detection of conceal…
In this thesis, we present the first-ever fully integrated mm3 low-power biomedical transceiver with 1 meter of range that is powered by a mm2 thin-film battery. The transceiver is targeted for biomedical implants where size and energy constraints dictated by application make de…
Demand for miniaturized and long-lasting power sources is increasing in biomedical applications as wearable and implanted devices are becoming more prevalent. The scaling of CMOS feature sizes, supply voltages, power budgets, and the desire for systems to be wireless and operati…
In this work a fully photolithographically defined complementary metal oxide semiconductor (CMOS) device is fabricated. Particular focus was on the use of solution based materials for device integration. P-type and n-type materials were evaluated for use in an organic thin film …
The continuous demand for high performance applications and simultaneous lowering of power consumption and manufacturing cost is driving the transistor size to sub-50nm regime. Although, aggressive transistor scaling has resulted in increased integration density and improved dev…
The quest for technologies beyond 14nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on higher-k gate dielectrics integration with high mobility channel materials such as III-V semiconductors and germanium. Ternary oxides, such as La2– x…