This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra…
The book contains 14 chapters. The following topics are dealt with: Power Electronics challenges; Junction diodes; Thyristors; Silicon MOSFETs; Silicon IGBTs; IGCTs; Silicon carbide diodes; SiC MOSFETs; GaN metal-insulator-semiconductor field-effect transistors; Gallium nitride …
The book contains 14 chapters. The following topics are dealt with: Power Electronics challenges; Junction diodes; Thyristors; Silicon MOSFETs; Silicon IGBTs; IGCTs; Silicon carbide diodes; SiC MOSFETs; GaN metal-insulator-semiconductor field-effect transistors; Gallium nitride …
"Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, che…
The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; po…
