Strained silicon heterostructures: materials and devices
by Chakrabarti, N. B. Maiti, C. K. Ray, S. K.,, Dr
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Title Statements
- Full title :Strained silicon heterostructures : materials and devices / edited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray.
Edition Statements
- Publication Date:©2001.
Publication Statements
- Publisher(s):Institution of Electrical Engineers
- Place of Publication:London
- Language:eng
- Publication Date:©2001.
The Physical Object
- Description:1 online resource (xii, 496 pages) : : illustrations
Edition Identifiers
- ISBN:9781849191678, 1849191670
- oclc:ocn657839611
- LC Classification:QC611.8.S5
- Dewey Decimal:620.193
Table of Contents
Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.
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