Thesiss

The focus of this work is to study the feasibility, reliability and applicability of advanced dielectrics in both Metal Oxide Semiconductor Field Effect Transistor (MOSFET) gate oxide and device level packaging for Microelectromechanical Systems (MEMS). The scaling of silicon ba…

Chalcogen atoms have been successfully used for the passivation of GaAs(100) as well as Ge(100) and Si(100) substrates. Unlike GaAs(100) and Ge(100), the native oxide(SiO2) of Si(100) substrate is not soluble in ammonium sulfide solution ((NH4)2Sx) or water, which is a major pro…

The quest for technologies beyond 14nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on higher-k gate dielectrics integration with high mobility channel materials such as III-V semiconductors and germanium. Ternary oxides, such as La2– x…