MOS interface physics, process and characterization

MOS interface physics, process and characterization

by Wang, Shengkai

Type Book
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"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"

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Title Statements

  • Full title :MOS interface physics, process and characterization / Shengkai Wang and Xiaolei Wang.

Summary

"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"

Read More ↓

Edition Statements

  • Publication Date:2022
  • Edition:First edition

Publication Statements

Notes

Includes bibliographical references.

The Physical Object

  • Description:xi, 161 Seiten : Illustrationen, Diagramme

Edition Identifiers

  • ISBN:9781032106274, 1032106271, 9781032106281, 103210628X
  • oclc:on1268532193
  • LC Classification:TK7871.99.M44
  • Dewey Decimal:621.3815/284

Subjects

Integrated circuits -- Research Metal oxide semiconductors -- Design an… Semiconductors -- Junctions Solid state physics -- Experiments

Writers

Wang, Shengkai Wang, Xiaolei

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