VLSI electronics microstructure science

by Einspruch, Norman G. Larrabee, Graydon B.

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Materials and Process Characterization.

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Title Statements

Full title :VLSI electronics microstructure science. / edited by Norman G. Einspruch, Graydon B. Larrabee.

Summary

Materials and Process Characterization.

Edition Statements

Publication Date:©1983

Publication Statements

Publisher(s):Academic Press
Place of Publication:New York, New York
Language:eng
Publication Date:©1983

The Physical Object

Description:1 online resource (614 pages) : : illustrations, tables

Edition Identifiers

ISBN:9781483217734, 1483217736
oclc:ocn900885669
LC Classification:TK7874.75
Dewey Decimal:621.38171

Front Cover; Materials and Process Characterization; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Characterization of Silicon Materials for VLSI; I. INTRODUCTION; II. CHARACTERIZATION TECHNIQUES; III. POLYCRYSTALLINE SILICON; IV. SINGLE-CRYSTAL SILICON; V. SLICE PREPARATION; VI. SUMMARY; APPENDIX. PROPERTIES OF 54 ELEMENTS IN SINGLE-CRYSTAL SILICON; REFERENCES; Chapter 2. Characterization of Silicon Expitaxial Films; I. INTRODUCTION; II. EPITAXIAL-GROWTH PROCESS; III. ELECTRICAL CHARACTERIZATION; IV. PHYSICAL AND OPTICAL CHARACTERIZATION

V. EPITAXIAL-DEFECT CHARACTERIZATIONVI. EPITAXIAL-DEFECT MEASUREMENTS; VII. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 3. Characterization of Dielectric Films; I. INTRODUCTION AND BACKGROUND; II. BASIC STRUCTURE AND PROPERTIES OF GATE DIELECTRICS; III. THE CLASSIFICATION OF DIELECTRIC CHARGES; IV. THE SPATIAL LOCATION OF OXIDE CHARGE; V. THE AMOUNT AND ENERGY LOCATION OF INTERFACE TRAPS; VI. TEMPERATURE EFFECTS ON MOBILE IONIC CHARGE; VII. INJECTED CHARGE TRAPPING IN OXIDE FILMS; VIII. THE ROLE OF DIELECTRIC LAYER CHARACTERIZATION IN VLSI; ACKNOWLEDGMENT; REFERENCES

Chapter 4. The Status of Dry-Developed Resist…

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