Gallium nitride (GaN)
by Pankove, Jacques I., Moustakas, T. D.
fromSemiconductors and semimetals
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Type: Book
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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in pub…
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-base…
III-nitride devices and nanoengineering
0
Type: Book
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-base…
Microwave switches are important components of most microwave systems such as radars, phase array antennas, cell phone and satellite communications etc. III-Nitride Heterojunction Field Effect Transistor (HFET) microwave switches have demonstrated significant advantages over mos…
We have obtained ultraviolet and vacuum ultraviolet electroreflectance spectra of GaN and a series of AlGaN samples. The spectra obtained from them include the fundamental and the next higher energy transitions around the E1 critical point. This is the first report of vacuum ult…